0.11 Ultra-low Leakage
Overview
公司 0.11 ULL采用了铝互连技术，1P8M 架构，提供1.5V 内核器件及3.3V 输入输出器件，具备超低漏电特点，器件特征Ioff (pA/um)<0.5。
Key Features
- Single poly, eight-metal-layer process
- Al backend with low-K FSG material
- Device Ioff (typical) <0.5 pA/um
Applications
- MCU
- IOT
0.11 ULL flash
Overview
公司 0.11 ULL flash 工艺是基于0.11 ULL工艺嵌入flash, 逻辑器件与ULL兼容。提供超低功耗模拟IP。
Key Features
- Double poly, eight-metal-layer process
- Al backend with low-K FSG material
- Competitive flash macro cell size
Application
- MCU
- IOT
